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| SEMICONDUCTOR TECHNICAL DATA FOR LOW-FREQUENCY AMPLIFICATION. FEATURES High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. USM type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. KTD1824 EPITAXIAL PLANAR NPN TRANSISTOR E M B M 2 D 3 DIM A B C D E G H J K L M N 1 MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN A J C G H N K N MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING 50 40 15 50 100 100 150 -55 150 UNIT V V V 1. EMITTER 2. BASE 3. COLLECTOR L USM mA mW Collector Power Dissipation Junction Temperature Storage Temperature Range Marking Type Name h FE Rank L ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Note : hFE Classification A:400~800, ICBO ICEO ) TEST CONDITION VCB=20V, IE=0 VCE=20V, IB=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCE=10V, IC=2mA IC=10mA, IB=1mA VCB=10V, IE=-2mA, f=200MHz C:1000~2000 MIN. 50 40 15 400 1000 0.05 120 2000 0.2 V MHz TYP. MAX. 100 1 UNIT nA A V V V SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO hFE (Note) VCE(sat) fT B:600~1200, 2001. 11. 29 Revision No : 1 1/3 KTD1824 I C - V CE COLLECTOR CURRENT I C (mA) 120 Ta=25 C 100A 90A 80A 70A 60A 50A h FE - I C 1200 DC CURRENT GAIN h FE VCE =10V 100 80 60 40 20 0 0 2 4 6 8 900 Ta=75 C Ta=25 C 40A 30A 600 Ta=-25 C 20A I B =10A 300 0 10 0.1 0.3 1 3 10 30 100 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT I C (mA) 1 0.5 0.3 I C /I B =10 I C - V BE 100 80 60 40 20 0 Ta=-25 C Ta=75 C Ta=25 C VCE =10V 0.1 0.05 0.03 Ta=75 C Ta=25 C Ta=-2 5C 0.01 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) f T - IE COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 250 200 150 100 50 0 -0.1 VCB =10V Ta=25 C C ob - V CB 8 7 6 5 4 3 2 1 0 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V) I E =0 f=1MHz Ta=25 C -0.3 -1 -3 -10 -30 -100 EMITTER CURRENT I E (mA) 2001. 11. 29 Revision No : 1 2/3 KTD1824 Pc - Ta COLLECTOR POWER DISSIPATION P C (mW) 125 100 125 50 25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2001. 11. 29 Revision No : 1 3/3 |
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